Paper Titles
Effect of Furfural on Structure and Charring Properties of Phenolic Resins
p.36
Combustion Properties of Briquette Charcoal from Durian Peel
p.41
The Analysis of Heavy Metals Pollution in Soil and Ecological Risk Assessment in Estuaries of Jiaozhou Bay, China
p.46
New Method to Harmonic Isolation Based on High Selectivity Filter to Control of Shunt Active Filter with Experimental Validation Using DSPACE System
p.53
Static Performance of SiGe HBTs at Low Temperature
p.59
Supervisory Control and FPGA Based DAQ Card
p.64
Research on A.C. Sampling Technique for the Electric Parameters Based on Embedded Linux and Frequency Self-Adapting
p.69
A Symmetrical Digital Selecting Type DC-DC Converter with Power Saving Techniques
p.77
Design and Analysis of a Fibonacci Switched-Capacitor DC-AC Inverter
p.82

Static Performance of SiGe HBTs at Low Temperature

Article Preview

Abstract:

—This paper analyse is the impact of cryogenic temperatures for SiGe Heterojunction Bipolar Transistors (HBTs) base, realised in BiCMOS9 0.13μm industrial process. The use of these components in microwaves applications exposed to various temperatures is fundamental aspect to predict in precise way its electric characteristics. This paper investigates the temperature dependence from (170 K to 300 K) of DC, for NPN SiGe heterojunction bipolar transistors (HBTs) and notably modeling high performance Si/SiGe HBT for telecommunication and radar detection (>0.5THz) in low temperature (cryogenic temperature).

You might also be interested in these eBooks
Electronics, Mechatronics and Automation III View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volume 666)

Pages:

59-63

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.666.59

Citation:

Cite this paper

Online since:

October 2014

Authors:

Maya Lakhdara*, Saϊda Latreche, Christian Gontrand

Keywords:

BiCMOS, HBT, Low Temperature, Numerical Modeling, SiGe, Static Characteristics

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2014 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

References

[1] B. Heinemann, R. Barth, D. Bolze, J. Drews, G. G. Fischer, A. Fox, O. Fursenko, T. Grabolla, U. Haak, D. Knoll, R. Kurps, M. Lisker,S. Marschmeyer, H. Rücker, D. Schmidt, J. Schmidt, M. A. Schubert, B. Tillack, C. Wipf, D. Wolansky, and Y. Yamamoto, SiGe HBT technology with fT /fmax of 300 GHz/500 GHz and 2. 0 ps CML gate delay, in IEDM Tech. Dig., 2010, p.688.

DOI: 10.1109/iedm.2010.5703452

Google Scholar

[2] Michael Schröter, Julia Krause, Niccolò Rinaldi, Gerald Wedel, Bernd Heinemann, Pascal Chevalier, , and Alain Chantre, , Physical and Electrical Performance Limits of High-Speed SiGeC HBTs—Part II: Lateral Scaling, IEEE Transaction on Electron Devices, Vol. 58, N°. 11, November (2012).

DOI: 10.1109/ted.2011.2163637

Google Scholar

[3] RF Power Characteristics of SiGe HBTs at Cryogenic Temperatures Meng-Wei Hsieh, Yue-Ming Hsin, Kung-Hao Liang, Yi-Jen Chan, and Denny Tang, IEEE Transaction on Electron Devices, Vol. 53, N°. 6, June (2006).

DOI: 10.1109/ted.2006.874156

Google Scholar

[4] Z. Huszka, D. Céli, and E. Seebacher, A Novel Low-Bias Charge Concept for HBT/BJT Models Including Heterobandgap and Temperature Effects—Part I: Theory,, IEEE Transaction on Electron Devices, Vol. 58, N°. 2, FEBRUARY (2011).

DOI: 10.1109/ted.2010.2091643

Google Scholar

[5] Q. Liang, R. Krithivasan, A. Ahmed, Y. Lu, Y. Li, J.D. Cressler, G. Niu, J. -S. Rieh, G. Freeman, D. Ahlgren, and A. Joseph, Analysis and nderstanding unique cryogenic p henomena of state-of-the-art SiGe HBTs, Solid-State Electronics, Vol. 50 , No. 6, pp.964-972, June (2006).

DOI: 10.1016/j.sse.2006.04.027

Google Scholar

[6] J. C. Nunez-Perez, M. Lahkdara, M. Bouhouche, J. Verdier, S. Latreche, and C. Gontrand, First- and second-order electrical modeling and experiment on very high speed SiGeC heterojunction bipolar transistors, Semiconductor science and Technology, 24 (2009).

DOI: 10.1088/0268-1242/24/4/045010

Google Scholar