GaN Radiation Detection Research Based on Monte Carlo Method

Abstract:

Gallium nitride (GaN) is the third generation of semiconductor material; it has a large band gap, high thermal conductivity, low dielectric constant, high drift speed, etc. Radiation detectors based on GaN material have small volume, high radiation resistance, and fast response, can be used to replace the existing Large Hadron Collider vertex detector and track detector. Energy deposition characteristic of GaN detectors to radiation beam is an important factor for detection efficiency, and there are many factors that affect the energy deposition characteristics of the detector, like the detection mechanism, the impact of material properties, the type of incident ray, radiation energy, and many other factors. This paper studies the physical properties of GaN detector by calculation based on Monte Carlo simulation. Energy deposition characteristics are discussed respectively for incident γ-ray with different energy, in the front-end and back-end add PTFE material. The results of our study present the theoretical properties of GaN radiation detectors.

• Periodical: Applied Mechanics and Materials (Volumes 668-669)
• Pages: 1011-1014
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.668-669.1011
• Online since: October 2014
• Authors: Yang Liu*, Guo Zheng Zhu, Zhen Ni Xing
• Keywords: Energy Deposition, GaN, Monte Carlo Method, Semiconductor Radiation Detector

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