Study on Loss Calculation for Inverter Based on 1200V SiC MOSFET

Abstract:

SiC MOSFETs are expected as one of next generation power devices for their superior performances compared with conventional Si power devices and have become one of the new promising substitude to Si devices. The characteristics of 1200V SiC MOSFET are presented first and the power losses analysis model of SiC devices are given. As losses of power devices are essential parameters in converter design, the power dissipation of SiC MOSFET in SPWM inverter are calculated. In this paper, whether a free-wheeling-diode necessary is illustrated from the point of power dissipation and choice is made based on the power loss. According to the analysis result, the inverter without SBD shows less power losses, which can reduce the cost and volume of inverter.

• Periodical: Applied Mechanics and Materials (Volumes 672-674)
• Pages: 906-913
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.672-674.906
• Online since: October 2014
• Authors: Li Jun Xie*, Jin Yuan Li, Kun Shan Yu
• Keywords: Power Losses, SiC MOSFET, Simulation, SPWM Inverter

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