Primary Total Ionizing Dose Effect Studies on Xilinx SoC Irradiated with 60Co γ Rays

Yao Zhang; Xin Du; Xue Cheng Du; Dong Sheng He; Lin Gang Zhang; Chao Hui He; Yong Hong Li; Hang Zang; Shu Huan Liu; Xin Zan Liu; Wei Chen; Yun Yun Fan; Cen Xiong; Du Tang

doi:10.4028/www.scientific.net/AMM.678.252

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 678Primary Total Ionizing Dose Effect Studies on...

Primary Total Ionizing Dose Effect Studies on Xilinx SoC Irradiated with ⁶⁰Co γ Rays

Abstract:

We designed radiation effect experimental system including current measurement section and functional test section for Xilinx Zynq-7010 System on chip (SoC) and performed the Total Ionizing Dose (TID) experiment irradiated by Co60 γ-source on the chip. At the dose rate of 0.04 Gy(Si)/s, the total dose of 1.69 kGy(Si), the current value in the experiment increased first and then decreased. The test board got functional interruption at the gamma dose of 1.69 kGy(Si). The function of the board normalized after room temperature annealing and 70°C high temperature annealing except that the current value decreased by 28% compared to the current before irradiation. The mechanisms for the first TID test results on Xilinx SoC were deduced and discussed.

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Periodical:

Applied Mechanics and Materials (Volume 678)

Pages:

252-259

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.678.252

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Online since:

October 2014

Authors:

Yao Zhang*, Xin Du, Xue Cheng Du, Dong Sheng He, Lin Gang Zhang, Chao Hui He, Yong Hong Li, Hang Zang, Shu Huan Liu, Xin Zan Liu, Wei Chen, Yun Yun Fan, Cen Xiong, Du Tang

Keywords:

Chip, Experimental System, Radiation Effect, SoC, TID, TID Experiment

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