The Electrical Properties and Impedance Analysis of ZnO Varistors Doped with Different Cu2O Contents

Ji Wei Fan; Hui Jun Zhao; Xiao Li Zhang

doi:10.4028/www.scientific.net/AMM.681.173

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 681The Electrical Properties and Impedance Analysis...

The Electrical Properties and Impedance Analysis of ZnO Varistors Doped with Different Cu₂O Contents

Abstract:

The Cu₂O addition deteriorates the electrical properties of ZnO varistors, which is a good agreement with similar findings on Ag₂O additions. The best fitted impedance analysis reveals that the Cu₂O addition increases grain resistance and lowers the grain boundary resistance, results in low nonlinearity and higher leakage current of ZnO varistors.

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Applied Mechanics and Materials (Volume 681)

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173-176

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https://doi.org/10.4028/www.scientific.net/AMM.681.173

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Online since:

October 2014

Authors:

Ji Wei Fan*, Hui Jun Zhao, Xiao Li Zhang

Keywords:

CuO₂ Doping, Electrical Properties, Impedance Analysis, ZnO Varistor

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References

[1] D.R. Clarke, Vristor ceramics. J. Am. Ceram. Soc. 82 (1999), 485.

Google Scholar

[2] T.K. Gupta, Application of zinc oxide varistors. J. Am. Ceram. Soc. 73 (1990), 1817.

Google Scholar

[3] J. Fan, P. Poosimma, R. Freer, The Phase Development of ZnO varistor, accepted to be published on Advances in Applied Ceramics, (2014).

Google Scholar

[4] J. Fan, R. Freer: Electrical properties and DC degradation characteristics of Ag doped ZnO varistors. J. Mater. Sci. 28 (1993), 1391.

DOI: 10.1007/bf01191983

Google Scholar

[5] J. Fan, R. Freer: Improvement of the non-linearity and degradation behavior of ZnO various by combined Al and Ag doping. Br. Ceram. Trans. 92 (1993), 221.

Google Scholar

[6] J. Fan, R. Freer: The Roles Played by Ag and Al Dopants in Controlling the Electrical Properties of ZnO Varistors, J. Appl. Phys. 77 (1995), 4795.

DOI: 10.1063/1.359398

Google Scholar

[7] H. Satoh, et al: Effect of Cu-doping on II-VI semiconducting ZnO. Ferroelectrics. 264 (2001), 139.

Google Scholar

[8] Z. Zhou, et al., Effects of dopants and hydrogen on the electrical conductivity of ZnO, J. Euro. Ceram. Soc., 24 (2004), 139.

Google Scholar

[9] N. Raghu, T. R. N. Kutty, The influence of dislocations on the nonlinearity of ZnO: Cu varistors, J. Mater. Sci: Materials in Electronics, 1 (1990), 84.

DOI: 10.1007/bf00694912

Google Scholar

[10] N B. S. Chiou, M. C. Chung, Effect of copper additives on the microstructure and electrical properties of polycrystalline zinc oxide, J. Am. Ceram. Soc., 75 (1992), 3363.

Google Scholar

[11] J. Fan, et al., The Effects of Cu Dopant on the Microstructure and Non-ohmic Electrical Properties of ZnO Varistors, Advanced Materials Research, 343-344 (2012), 160.

DOI: 10.4028/www.scientific.net/amr.343-344.160

Google Scholar

[12] T. K. Gupta, A. C. Miller, Improved Stability of the ZnO Varistor via Donor and Acceptor Doping at the Grain-boundary, J. Mater. Res. 3 (1988), 745.

DOI: 10.1557/jmr.1988.0745

Google Scholar