A Read-Write Optimization Scheme for Flash Memory Storage Systems

Yin Yang; Wen Yi Li; Kai Wang

doi:10.4028/www.scientific.net/AMM.687-691.2096

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 687-691A Read-Write Optimization Scheme for Flash Memory...

A Read-Write Optimization Scheme for Flash Memory Storage Systems

Abstract:

In this paper, we propose a novel and efficient read-write optimization scheme for flash memory storage systems, we have named RWF: Read-Write FTL. In the proposed scheme, we effectively connect Logical Sector Number, Logical Block Number, Logical Page Number, Physical Page Number and Physical Block Number. RWF through uniting log blocks and physical blocks, all blocks can be used for servicing update requests. The invalid blocks could be reclaimed properly and intensively, it can avoid merging log blocks with physical blocks. At last, through the simulation test on RWF and the comparison with other schemes, which demonstrate the RWF can effectively solve data storage problems, and it greatly reduces erase count of flash devices and efficiency improves the performance of flash memory storage systems.

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Periodical:

Applied Mechanics and Materials (Volumes 687-691)

Pages:

2096-2099

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.687-691.2096

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Online since:

November 2014

Authors:

Yin Yang*, Wen Yi Li, Kai Wang

Keywords:

Flash Memory Storage Systems, Flash Translation Layer, Read-Write

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