A Simulation Based Study on Gate Oxide Breakdown Characteristics for NMOS

Ling Sun; Yu Wei Zhou; Hong Wang; Xiang Dong Luo; Jia Yuan Guo

doi:10.4028/www.scientific.net/AMM.696.57

Paper Titles

Discussion on the Complicated Topological Dynamic System of Ordinary Differential Equation (ODE)
p.30

Design and Simulation Analysis of One-Dimension Projectile Trajectory Corrector for Mortar Shell
p.38

Research on the Anti-Rust Mechanism of T704
p.49

Optimization of Anhydrous Coolant’s Base Fluid and the Evaluation of Low Temperature Performance
p.53

A Simulation Based Study on Gate Oxide Breakdown Characteristics for NMOS
p.57

The Evolution of Non-Metallic Inclusions in IF Steel
p.62

Argon Blowing Technology Using in the LF Refining
p.66

Microstructure Characteristics and Surface Residual Stress of Iron-Based Alloy Coating by Laser Cladding
p.70

Construction of a Digital Microlithography System Based on Violet Semiconductor Laser
p.76

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 696A Simulation Based Study on Gate Oxide Breakdown...

A Simulation Based Study on Gate Oxide Breakdown Characteristics for NMOS

Abstract:

The relationship between the location of gate oxide breakdown in n-MOSFETs and its electrical characteristics has been studied by using TCAD software. The comparison of device terminal current with gate oxide breakdown at different locations suggests that the variation of the source and the drain currents can be directly correlated to the breakdown location in the ultra thin gate oxide. The results provide a fundamental understanding to the experimental results observed in our devices.

You might also be interested in these eBooks

Innovative Development of Industrial Manufacturing

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volume 696)

Pages:

57-61

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.696.57

Citation:

Cite this paper

Online since:

November 2014

Authors:

Ling Sun, Yu Wei Zhou, Hong Wang*, Xiang Dong Luo, Jia Yuan Guo

Keywords:

Gate Oxide Breakdown, MOSFET, TCAD

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Donald A. Neamen, Semiconductor Physics and Devices: Basic Principles, McGraw-Hill Higher Education, (2012).

Google Scholar

[2] F. Palumbo, S. Lombardo, M. Eizenberg, Physical mechanism of progressive breakdown in gate oxides, Journal of Applied Physics, 2014, 115(22): 224101-224101-7.

DOI: 10.1063/1.4882116

Google Scholar

[3] Soo Young Kim, Chih-Hsiang Ho, K. Roy, Statistical SBD Modeling and Characterization and Its Impact on SRAM Cells, IEEE Transactions on Electron Devices, 2014, 61(1): 54-59.

DOI: 10.1109/ted.2013.2292060

Google Scholar

[4] P. E. Nicollian, Min Chen, Yang Yang, et al, nMOS Short Channel Device Characteristics After Soft Oxide Breakdown and Implications for Reliability Projections and Circuits, IEEE Transactions on Electron Devices, 2014, 61(1): 66-72.

DOI: 10.1109/ted.2013.2292551

Google Scholar

[5] Rong Zeng, Hong Wang, Effect of FN Stress and Gate-Oxide Breakdown on High-Frequency Noise Characteristics in Deep-Submicrometer nMOSFETs, IEEE Electron Device Letters, 2005, 26(6): 390-393.

DOI: 10.1109/led.2005.848102

Google Scholar

[6] R. Degraeve, B. aczer, A. D. Keersgieter, and G. Groeseneken, Relation between breakdown mode and location in short-channel nMOSFETs and its impact on reliability specifications, IEEE Transactions on Device and Materials Reliability, 2001, 1(3): 163-169.

DOI: 10.1109/7298.974832

Google Scholar

[7] A. Avellan, W. H. Krautschneider, Impact of Soft and Hard Breakdown on Analog and Digital Circuits, IEEE Transactions on Devices and Materials Reliability, 2004, 4(4): 667-680.

DOI: 10.1109/tdmr.2004.836729

Google Scholar