Influence of Bi_3.15Nd_0.85Ti₃O₁₂ Buffer Layer on Structure and Electrical Properties of Bi_0.94Ce_0.06Fe_0.97Ti_0.03O₃ Thin Films

Abstract:

Bi_0.94Ce_0.06Fe_0.97Ti_0.03O₃ and Bi_0.94Ce_0.06Fe_0.97Ti_0.03O₃/Bi_3.15Nd_0.85Ti₃O₁₂ double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO₂/Si substrates. The influence of Bi_3.15Nd_0.85Ti₃O₁₂ buffer layer on microstructure and electrical properties of Bi_0.94Ce_0.06Fe_0.97Ti_0.03O₃ thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi_0.94Ce_0.06Fe_0.97Ti_0.03O₃ films with Bi_3.15Nd_0.85Ti₃O₁₂ buffer. The remnant polarization (2P_r) of the double-layered thin films is 112 μC/cm². The coercive field (2E_c) of double-layered films is 672 kV/cm, which is much lower than that of the Bi_0.94Ce_0.06Fe_0.97Ti_0.03O₃ thin films. The leakage current density of Bi_0.94Ce_0.06Fe_0.97Ti_0.03O₃/Bi_3.15Nd_0.85Ti₃O₁₂ double-layered thin films is 4.12×10^-5 A/cm².

• Periodical: Applied Mechanics and Materials (Volume 703)
• Pages: 51-55
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.703.51
• Online since: December 2014
• Authors: Jia Zeng, Ming Hua Tang*, Zhen Hua Tang, Yong Guang Xiao, Long Peng, Yi Chun Zhou
• Keywords: Double-Layered Thin Films, Ferroelectricity Property, Sol-Gel

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