Improved Ghost Plating of Light-Induced Plating on Crystalline Silicon Solar Cells by SiO2/SiN Selective Etching

Abstract:

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In this paper, the ghost plating problems of crystalline silicon solar cells is studied in theory and experiment. After laser doping process, a pretreatment process is needed to remove SiO2 in the heavy doping area and keep SiN mask simultaneously by using chemical solution containing HF. Otherwise, the unexpected non-heavy-doping area would be plated with silver, resulting in the ghost plating problems. The mechanism of HF etching SiO2 and SiN is analyzed and the feasibility of selective etching is discussed. By changing the main aspects of affecting the etching rate, the ghost plating of crystalline silicon solar cells is improved.

Info:

Periodical:

Edited by:

Dongye Sun, Wen-Pei Sung and Ran Chen

Pages:

2290-2293

DOI:

10.4028/www.scientific.net/AMM.71-78.2290

Citation:

T. Li et al., "Improved Ghost Plating of Light-Induced Plating on Crystalline Silicon Solar Cells by SiO2/SiN Selective Etching", Applied Mechanics and Materials, Vols. 71-78, pp. 2290-2293, 2011

Online since:

July 2011

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Price:

$35.00

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