The Effects of the Post-Annealing Atmosphere on the Ultraviolet Responsivity of n-ZnO/p-Silicon Nanowire Heterojunction

Hai Zhou; Yong Dan Zhu; Cheng Hu; An You Zuo

doi:10.4028/www.scientific.net/AMM.716-717.150

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 716-717The Effects of the Post-Annealing Atmosphere on...

The Effects of the Post-Annealing Atmosphere on the Ultraviolet Responsivity of n-ZnO/p-Silicon Nanowire Heterojunction

Abstract:

UV photoresponse of n-ZnO/p-Silicon nanowire (SiNW) photodiodes is investigated by varying post-treatment conditions. Based on spectral responsivity measurement, the responsivity of our photodiodes decreases with increasing the post-annealing temperature in vacuum atmosphere, and the biggest responsivity reaches to as high as ~42 A/W under a reverse bias of 2V near 390 nm when the post-annealing temperature is at 100 °C. And the responsivity is higher when our devices are annealed in vacuum atmosphere than in oxygen atmosphere. We think that the higher responsitivity may be due to the smaller grain size and more oxygen-vacancy-related defects in ZnO film deposited at lower temperature. These results may benefit potential applications of n-ZnO/p-SiNW photodetectors in ultraviolet region.

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Applied Mechanics and Materials (Volumes 716-717)

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150-153

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https://doi.org/10.4028/www.scientific.net/AMM.716-717.150

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December 2014

Authors:

Hai Zhou*, Yong Dan Zhu, Cheng Hu, An You Zuo

Keywords:

Oxygen-Vacancy, Post-Annealing Atmosphere, UV Photoresponse

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