Electromagnetic Compatibility Analysis Method for FBAR Devices

Abstract:

With the increasing of resonant frequency and integration of film bulk acoustic resonator (FBAR), the electromagnetic interference (EMI) of FBAR devices appears to be extremely important. The electric fields of the common electrical model and finite element model are assumed to be quasi-static and cannot simulate the electromagnetic (EM) property. A 3-D EM model of FBAR is achieved by means of high frequency EM simulation software HFSS. A real-time simulation of EM distributed effects, EM coupling and piezoelectric effects is achieved by employing an effective permittivity in the EM model. The effects of the high frequency EM distributed effects and the EM coupling on resonant characteristics are analyzed. By optimizing the distance between FBAR and components, introducing substrate materials with different permittivity, the EM coupling is effectively reduced.

• Periodical: Applied Mechanics and Materials (Volumes 719-720)
• Pages: 452-460
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.719-720.452
• Online since: January 2015
• Authors: Yang Gao*, Bin Zhou, Yi He, Wan Jing He
• Keywords: Effective Permittivity, Electromagnetic Interference (EMI), Em Coupling, Em Distributed Effects, Film Bulk Acoustic Resonator (FBAR), High Frequency Em Simulation

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