Design and Flow Simulation on a Variable Structure Plasma Reaction Chamber

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Abstract:

A new variable structure chamber was designed to plasma reaction with two-stage showerhead, and its flow filed dynamic control equation was analyzed and meshed by ICEM. The simulation research for the meshed models was analyzed by a commercial software-Fluent, by changing various parameters such as mass flow inlet, height, diameter and section of outlet. The result shows that the height and diameter variation for chamber has a little influence on the pressure upon susceptor. However, when the mass flow increases in inlet, the pressure improves, and it also changes as the section variation of outlet.

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868-872

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January 2015

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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[1] M. Brian, N. Huong, B. Michael And N. Tom, U.S. Patent 6, 013, 155. (1997).

Google Scholar

[2] J. J. Dalton, M. Z. Karim, And R. Londergan. U.S. Patent 7, 981, 472. (2009).

Google Scholar

[3] Y.J. Kim, J.H. Boo, B. Hong, Y.J. Kim, Effects of showerhead shapes on the flowfields in a RF-PECVD reactor, Surface and Coatings Technology. 193(2005) 88-93.

DOI: 10.1016/j.surfcoat.2004.07.033

Google Scholar

[4] C.G. Wang, G.Q. Li, L.X. Lu, Y. Wang, Research on uniform airflow of plasma enhanced chemical vapor deposition, Computer Simulation. 6(2010)122-125.

Google Scholar

[5] F.J. Wang, Computer Fluid Dynamics, Beijing, (2004).

Google Scholar

[6] J. Cheng, Y. Zhu, Gas flow simulation research on reaction chamber of ICP etcher, Semiconductor Technology. 32(2007)43-46.

Google Scholar

[7] LEE J W, JUNG P G, DEVRE M, et al, Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers, SSE. 46(2002) 685-688.

DOI: 10.1016/s0038-1101(01)00328-8

Google Scholar