Obtainable P-Type ZnO Film Doped with Li by Sol-Gel Method

Abstract:

A series of Li-doped zinc oxide ( ZnO ) thin films were deposited on quartz glass by sol-gel and spin coating method. Their p-type conductivities could be achieved by subsequently thermal annealing process, which were characterized by Hall effect measurement. An optimized result with resistivity of 46.8 Ω cm, Hall mobility of 1.35 cm2/V s, and hole concentration of 9.89×1016 cm-3 was achieved at the annealing temperature of 700 °C. The films exhibited highly (002) oriented growth in all the cases. Strong green emission centered at 510 nm was observed by photoluminescence spectra in Li-doped ZnO films at room temperature.

• Periodical: Applied Mechanics and Materials (Volume 734)
• Pages: 796-801
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.734.796
• Online since: February 2015
• Authors: Ting Ting Wang*, Miao Miao Dai, Ya Jun Yan, Hong Zhang, Yi Min Yu
• Keywords: Annealing Temperature, Electrical Property, Li-Doped ZnO, p-Type

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