Properties of Sputtered-n-nc-Si:Er/p-Si Heterojunction Solar Cells

Abstract:

Nanocrystalline Si:Er (nc-Si:Er) films were sputtered on p-Si (100) substrates and diffused with phosphorus to form PN heterojunction diodes. The I-V properties of these diodes were characterized. And the properties of diodes without Er were compared with n-nc-Si:Er/p-Si. It was found that n-nc-Si:Er/p-Si diodes had better characteristics. Solar cells based on n-nc-Si:Er/i-nc-Si/p-Si were fabricated and characterized. The photoelectrical conversion efficiency of 18.13% for n-nc-Si:Er/i-nc-Si/p-Si solar cell was achieved.

• Periodical: Applied Mechanics and Materials (Volume 734)
• Pages: 791-795
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.734.791
• Online since: February 2015
• Authors: Guang Wei Wang*, Sheng Li Lu, Xin Wei Zhao
• Keywords: Diode, Heterojunction, I-V Propertie, nc-Si:Er Film, Solar Cell, Sputtering

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