Characterization of a Smartphone’s CMOS Image Sensor Response to Radiation

Chao Qun Xu; Jie Jiang; Zhi Yuan Ouyang; Chuang He Qiu

doi:10.4028/www.scientific.net/AMM.742.17

Paper Titles

Preface and Conference Organization

A Dual-Wavelength Temperature Sensor Based on Fiber Optic Delay
p.3

An Efficient and Verifiable Privacy-Preserving Data Aggregation Scheme for Wireless Sensor Networks
p.7

An Ultrasonic Rayleigh Wave Transducer and its Application to Nondestructive Pressure Measurement
p.11

Characterization of a Smartphone’s CMOS Image Sensor Response to Radiation
p.17

Error Analysis and Algorithm Validation of Geomagnetic Sensor
p.21

Firefly-Inspired Synchronicity with a Weighted Factor for Wireless Sensor Networks
p.27

Study on Liquid QCM Sensor Design and its Response Model
p.32

Study on Temperature’s Character of Eddy Current Sensor
p.36

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 742Characterization of a Smartphone’s CMOS Image...

Characterization of a Smartphone’s CMOS Image Sensor Response to Radiation

Abstract:

As part of studies into the use of Smartphones as solar-radiation monitors, this article characterizes the violet response of a consumer complementary metal oxide semiconductor (CMOS)-based Smartphone image sensor in a controlled laboratory environment, with an adjustable Lamp as a radiation source, a band-pass filter (central wavelength is 400nm) covered on Smartphone camera lens and a ASD spectrometer observing synchronously. It is found that a logarithmic relationship appears between CMOS-based sensor imaging DN values and irradiance, and the red (R) component in the chromo-photograph is linearly relative to irradiance. In addition, a Smartphone can be used as a convenient and low-cost scientific instrument in the field of monitoring radiation characterization, due to its capacity to detect usable irradiances.