Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

Fa Ta Tsai; Hsi Ting Hou; Ching Kong Chao; Rwei Ching Chang

doi:10.4028/www.scientific.net/AMM.764-765.138

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 764-765Depositing High-Performance Conductive Thin Films...

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

Abstract:

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10^-4 Ωcm, 2.4×10²⁰ cm^-³, and 60.4 cm²V^-1s^-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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Periodical:

Applied Mechanics and Materials (Volumes 764-765)

Pages:

138-142

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.764-765.138

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Online since:

May 2015

Authors:

Fa Ta Tsai, Hsi Ting Hou, Ching Kong Chao, Rwei Ching Chang*

Keywords:

Atomic Layer Deposition, AZO, Resistance, Thin Films, Transmittance

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* - Corresponding Author

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