Effects of P-N Junction Built-In Electric Field on Ir-Led Resistance under Gamma Rays Irradiation

A.V. Gradoboev; V.V. Sednev

doi:10.4028/www.scientific.net/AMM.770.522

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 770Effects of P-N Junction Built-In Electric Field on...

Effects of P-N Junction Built-In Electric Field on Ir-Led Resistance under Gamma Rays Irradiation

Abstract:

It is known that the rate of introduction of radiation defects into the Schottky barrier of GaAs and InP diodes depends on the presence of the electric field. The main aim of this research is to study the influence of the built-in electric field at the p-n junction on the resistance of dual AlGaAs heterostructure IR-LEDs under gamma rays irradiation. It is determined that the rate of defects introduction in the presence of built-in electric field or reverse bias at p-n junction is considerably less than the rate of defects introduction into the neutral region without electric field. Then the possible ways of improving the radiation resistance of infrared LEDs are considered.

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Periodical:

Applied Mechanics and Materials (Volume 770)

Pages:

522-525

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.770.522

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Online since:

June 2015

Authors:

A.V. Gradoboev*, V.V. Sednev

Keywords:

AlGaAs, Gamma Ray, Heterostructures, Light Emitting Diodes, p-n Junction

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