Optical Properties of Cu₂ZnSnSe₄ Nanocrystalline Thin Films for Photovoltaic Devices

Abstract:

Presents a study of optical properties from transmittance measurements as a function of wavelength to CZTSe thin films (Cu₂ZnSnSe₄) using Bhattacharyya model and basic elements from the Swanepoel theory. The optical constants such as the absorption coefficient (α), the refractive index (n), the extinction coefficient (k) and physical properties such as gap (Eg), the real and imaginary part of the dielectric function (ε₁ and ε₂) and the film thickness (d), were determined. Gap values between 1.2 and 1.7 eV were obtained for compound when the mass (M_X) of ZnSe was varied during the deposition stage. Inhomogeneity and high surface roughness were observed by SEM measurements for all samples. Size grain varying between 458.16 and 630.28 nm were obtained while the ZnSe binary mass varied from 0.171 to 0.153 g. Refractive index and extinction coefficient of Cu₂ZnSnSe₄ films were obtained for λ = 800 nm. A decrease of ε₁ and ε₂ was observed as the wavelength increases; it is associated with the presence of binary phases in the XRD patterns.

• Periodical: Applied Mechanics and Materials (Volumes 789-790)
• Pages: 90-94
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.789-790.90
• Online since: September 2015
• Authors: Anderson Dussan*, Heiddy P. Quiroz, Jorge A. Calderón, Sandra M. López
• Keywords: CZTSe Compound, Dielectric Function, Optical Properties, Semiconductors, Thin Films

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