Microcantilevers Fabrication Process of Silicon-Based (Pb, La)(Zr, Ti)O3 Antiferroelectric Thick Films for Microactuator Applications

Abstract:

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(Pb, La) (Zr, Ti)O3 (PLZT) antiferroelectric thick films were deposited on Pt (111)/ Ti/SiO2/Si (100) substrates via sol-gel process. X-ray diffraction (XRD) analysis indicated that the films derived on Pt (111)/ Ti/SiO2/Si (100) substrates showed strong (111) preferred orientation. The Bulk and Surface silicon of micromachining process were employed in the silicon-based antiferroelectric thick film microcantilever fabrication, such as wet chemical etching for PLZT, inductive couple plasmas (ICP)for silicon etching, platinum etching and so on. Challenges such as Pt/Ti bottom electrode and morphology of PLZT thick film were solved, the integration of functional antiferroelectric materials and MEMS technology, provide a new way of thinking for the design and manufacture of micro-actuators.

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Periodical:

Edited by:

Linli Xu, Wenya Tian and Elwin Mao

Pages:

13-17

DOI:

10.4028/www.scientific.net/AMM.80-81.13

Citation:

Y. H. Yang et al., "Microcantilevers Fabrication Process of Silicon-Based (Pb, La)(Zr, Ti)O3 Antiferroelectric Thick Films for Microactuator Applications", Applied Mechanics and Materials, Vols. 80-81, pp. 13-17, 2011

Online since:

July 2011

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$35.00

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