Microcantilevers Fabrication Process of Silicon-Based (Pb, La)(Zr, Ti)O₃ Antiferroelectric Thick Films for Microactuator Applications

Abstract:

(Pb, La) (Zr, Ti)O₃ (PLZT) antiferroelectric thick films were deposited on Pt (111)/ Ti/SiO₂/Si (100) substrates via sol-gel process. X-ray diffraction (XRD) analysis indicated that the films derived on Pt (111)/ Ti/SiO₂/Si (100) substrates showed strong (111) preferred orientation. The Bulk and Surface silicon of micromachining process were employed in the silicon-based antiferroelectric thick film microcantilever fabrication, such as wet chemical etching for PLZT, inductive couple plasmas (ICP)for silicon etching, platinum etching and so on. Challenges such as Pt/Ti bottom electrode and morphology of PLZT thick film were solved, the integration of functional antiferroelectric materials and MEMS technology, provide a new way of thinking for the design and manufacture of micro-actuators.

• Periodical: Applied Mechanics and Materials (Volumes 80-81)
• Pages: 13-17
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.80-81.13
• Online since: July 2011
• Authors: Yu Hua Yang, Zhen Yu Zhao, Xin Feng Guan, Xiu Jian Chou
• Keywords: Antiferroelectric Thick Film, Micro Cantilever, Sol-Gel Process, Wet Chemical Etching

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