Investigation of Annealing Effect on the Electrical and Optical Properties of ITO Film Prepared by Sol-Gel Process

Jing Li; Xiao Dong Zhao

doi:10.4028/www.scientific.net/AMM.84-85.431

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 84-85Investigation of Annealing Effect on the...

Investigation of Annealing Effect on the Electrical and Optical Properties of ITO Film Prepared by Sol-Gel Process

Abstract:

Indium tin oxide thin film (ITO film) has been deposited onto the quartz glass by a sol-gel process, followed by annealing in air. The temperature range from 200 to 800 °C and the annealing effect on the optical, electrical and structural properties of ITO films has been studied in detail. ITO Films with a thickness of 100nm had an optical transparency up to 90% in the wavelength range of visible spectrum. The ITO film showed minimum resistivity of 1.65×10-3Ω.cm-1 when annealing temperature was 600°C in air. the rapid annealing process may contribute to the electrical property of ITO film for the densification of the micro structure. but the process may lead to the decrease of transparency for the reflection caused by grain boundary.

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Periodical:

Applied Mechanics and Materials (Volumes 84-85)

Pages:

431-435

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.84-85.431

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Online since:

August 2011

Authors:

Jing Li, Xiao Dong Zhao

Keywords:

Annealing Effect, Electrical Properties, ITO Film, Optical Property, Sol-Gel Process

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References

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