Mechanical Strain for 0.16 µm nMOSFET on 30 µm Si-Substrate

H. L. Kao; J. Y. Ke; M. T. Chen; Y. C. Lee; C. S. Yeh; S. P. Shih

doi:10.4028/www.scientific.net/AMM.87.129

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 87Mechanical Strain for 0.16 µm nMOSFET on 30 µm...

Mechanical Strain for 0.16 µm nMOSFET on 30 µm Si-Substrate

Abstract:

This paper reports the successful substrate transfer based on standard IC processing to an alternative substrate e.g. plastic. The device on ultra-thin Si substrate using grinding backside Si and thermo-compression bonding process is proposed. Acceptable electrical performances are achieved means that the substrate transfer process is controlled well. The DC characteristics of nMOSFETs as a function of orientations and device sizes under mechanical strain are also reported. Good performance and reliability of nMOSFETs under mechanical strain is obtained. The results suggest the feasibility of substrate transfer in achieving well-performance nMOSFETs for 3D integration or SiP technologies.

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Applied Mechanics and Materials (Volume 87)

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129-131

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.87.129

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Online since:

August 2011

Authors:

H. L. Kao, J. Y. Ke, M. T. Chen, Y. C. Lee, C. S. Yeh, S. P. Shih

Keywords:

Mechanical Strain, Substrate Transfer, Ultra Thin

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