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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 88-89Performance Analysis of Dual Vt Domino Circuits...

Performance Analysis of Dual V_tDomino Circuits with P-V-T Variations

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Abstract:

The leakage current, active power and delay characterizations of the domino circuits in the presence of P-V-T (Process, Voltage, and Temperature) variations are analyzed based on multiple-parameter Monte Carlo method. It is demonstrated that failing to account for P-V-T variations and process-electro-thermal couplings can result in significant inaccuracy in transistor-level performance estimation. It also indicates that under significant P-V-T variations, DTV (Dual V_t Technology) is still highly effective to reduce the leakage current and active power for domino circuits, but induces speed penalty. At last, the robustness of different domino circuits with DTV against the P-V-T variations is discussed.

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Periodical:

Applied Mechanics and Materials (Volumes 88-89)

Pages:

326-330

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.88-89.326

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Online since:

August 2011

Authors:

Jin Hui Wang, Na Gong, Gang Liu, Shu Qin Geng, Wu Chen Wu

Keywords:

Active Power, Delay, Dual V_t Domino Circuit, Leakage Current

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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