Emulation and Analysis on the ESD Sensitive Port of High-Frequency Low-Power Silicon Dynatrons

Jie Yang; You Zhi Hu; Zhan Cheng Wu

doi:10.4028/www.scientific.net/AMM.88-89.346

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 88-89Emulation and Analysis on the ESD Sensitive Port...

Emulation and Analysis on the ESD Sensitive Port of High-Frequency Low-Power Silicon Dynatrons

Abstract:

Within former research, it has been found that Collection to Base (CB) reversal junction of partial kinds of high-frequency low-power Silicon dynatrons is the most sensitive port to ESD. It is different from what people know as usual. By the computer emulation, the failure mechanism of ESD injection is analyzed. And the difference between CB reversal junction and EB reversal junction has been discussed in detail.

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Periodical:

Applied Mechanics and Materials (Volumes 88-89)

Pages:

346-349

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.88-89.346

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Online since:

August 2011

Authors:

Jie Yang, You Zhi Hu, Zhan Cheng Wu

Keywords:

Emulation, ESD, Sensitive Port, Silicon Dynatron

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References

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DOI: 10.3403/30143587

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