Emulation and Analysis on the ESD Sensitive Port of High-Frequency Low-Power Silicon Dynatrons
Within former research, it has been found that Collection to Base (CB) reversal junction of partial kinds of high-frequency low-power Silicon dynatrons is the most sensitive port to ESD. It is different from what people know as usual. By the computer emulation, the failure mechanism of ESD injection is analyzed. And the difference between CB reversal junction and EB reversal junction has been discussed in detail.
Xingui He, Ertian Hua, Yun Lin and Xiaozhu Liu
J. Yang et al., "Emulation and Analysis on the ESD Sensitive Port of High-Frequency Low-Power Silicon Dynatrons", Applied Mechanics and Materials, Vols. 88-89, pp. 346-349, 2011