Influence of Thermal Annealing Atmosphere on Electrical Properties of Polycrystalline Silicon Grain Boundaries

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Edited by:

M. Zahir

Pages:

399-404

DOI:

10.4028/www.scientific.net/AMR.1-2.399

Citation:

N. M'Gafad et al., "Influence of Thermal Annealing Atmosphere on Electrical Properties of Polycrystalline Silicon Grain Boundaries", Advanced Materials Research, Vols. 1-2, pp. 399-404, 1994

Online since:

September 1994

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$35.00

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