Experimental Study of the Strain in Different Structures of the InGaN/GaN and InGaN/AlInGaN Quantum Well

Hui Liao; Mao Zhu Sun; Jian Jun Zhang; Chun Yan Song; Ting Fan; Kun Yang

doi:10.4028/www.scientific.net/AMR.1004-1005.325

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 1004-1005Experimental Study of the Strain in Different...

Experimental Study of the Strain in Different Structures of the InGaN/GaN and InGaN/AlInGaN Quantum Well

Abstract:

The strain existed in different quantum well structures was analyzed by XRD. By Omega/2Theta scanning,we got the satellite peaks of different samples. Analysis of the samples of these two quantum well about the level strain, vertical strain and the Quartet distortion. By Contrasting the ternary InGaN / GaN MQW samples with the quaternary InGaN/AlInGaN MQW samples,found that the level strain, vertical strain and the quartet distortion of ternary MQW samples are higher than the InGaN / AlInGaN quantum well samples about 0.03%, 0.09 % and 0.12% respectively. Analysis shows that the InGaN/AlInGaN quantum well structure can be better to release their internal stress.

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Advanced Materials Research (Volumes 1004-1005)

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325-329

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https://doi.org/10.4028/www.scientific.net/AMR.1004-1005.325

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August 2014

Authors:

Hui Liao*, Mao Zhu Sun, Jian Jun Zhang, Chun Yan Song, Ting Fan, Kun Yang

Keywords:

GaN, MQWs, XRD

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References

[1] Tao tao, Zhang zhao, Liu lian, et al: Journal of Semiconductors Vol. 32(2011), pp.083002-4.

Google Scholar

[2] Hideki Hirayamaa: J. Appl. Phys Vol. 97(2005), p.091101.

Google Scholar

[3] R. McClintock, A. Yasan, K. Mayes, et al: Appl. Phys. Lett Vol. 84(2004), p.1248.

Google Scholar

[4] Y. Taniyasu, M. Kasu, T. Makimoto: Nature Vol. 441(2006), p.325.

Google Scholar

[5] Kong Yue chan, Zhang You dou: Progress In Physics. Vol. 26(2006), p.128.

Google Scholar

[6] Losurdo M, Bruno G, Kim T H, et al: Applied Physics Letters Vol. 88(2006), p.121928.

Google Scholar

[7] Nakamura S, Mukai T, Senoh M, et al: Journal of Applied Physics Vol. 74(1993), p.3911.

Google Scholar

[8] Caetano C, Teles K L, Marques M, et al: Physical Review B Vol. 74(2006), p.045215.

Google Scholar

[9] Yoshikawa A, Che S B, Yamaguchi W, et al: Applied Physics Letters Vol. 90(2007), p.073101.

Google Scholar

[10] Kwon S Y, Baik S I, Kim Y W, et al: Applied Phusics Letters Vol. 86(2005), p.192105.

Google Scholar

[11] S. Strite and Morkoc: J. Vac. Sci. Technol Vol. 10(1992), p.1237.

Google Scholar

[12] W. Paszkowicz, S. Podsiad lo, and R. Minikayev: J. Alloys Compounds Vol. 382(2004), p.100.

Google Scholar

[13] W. Paszkowicz,R. cerny, and S. Krukowski: Powder Diraction Vol. 18(2003), p.114.

Google Scholar