[1]
R.L. Pease, R.D. Schrimpf, D.M. Fleetwood: ELDRS in bipolar linear circuits: a review, IEEE transactions on Nuclear Science, vol. 56, №4, pp.1894-1908, (2009).
DOI: 10.1109/tns.2008.2011485
Google Scholar
[2]
V.S. Pershenkov, D.V. Savchenkov, A.S. Bakerenkov, V.N. Ulimov, A.Y. Nikiforov, A.I. Chumakov: The conversion model of low dose rate effect in bipolar transistors, RADECS 2009 Conference Proceedings, pp.286-393.
DOI: 10.1109/radecs.2009.5994661
Google Scholar
[3]
V.S. Pershenkov, D.V. Savchenkov, A.S. Bakerenkov, V.N. Ulimov: Conversion model of enhanced low-dose-rate sensitivity for bipolar ICs, Russian Microelectronics, vol. 39, №2, pp.102-112, (2010).
DOI: 10.1134/s1063739710020046
Google Scholar
[4]
A.S. Bakerenkov, V.V. Belyakov, V.S. Pershenkov, A.A. Romanenko, D.V. Savchenkov, V.V. Shurenkov: Extracting the fitting parameters for the conversion model of enhanced low dose rate sensitivity in bipolar devices, Russian Microelectronics, vol. 42, №1, pp.48-52, (2013).
DOI: 10.1134/s1063739712040026
Google Scholar
[5]
V.S. Pershenkov, A.S. Bakerenkov, A.V. Solomatin, V.V. Belyakov: The estimation of long time operation bipolar devices in space environment using conversion model of ELDRS, RADECS 2013 Conference Proceedings.
DOI: 10.1109/radecs.2013.6937456
Google Scholar
[6]
M. Ullan, M. Wilder, H. Spieler , E. Spencer, S. Rescia, F.M. Newcomer, F. Martinez-McKinney, W. Kononenko, A.A. Glillo, S. Diez: Enhanced Low Dose Rate Sensitivity (ELDRS) tests on advanced SiGe bipolar transistors for very high total dose applications, Nuclear Instruments and Methods in Physics Research, A 724(2013).
DOI: 10.1016/j.nima.2013.04.088
Google Scholar
[7]
H.J. Barnaby, R.D. Schrimpf, R.L. Pease, P. Cole, T. Turflinger, J. Kreig, J. Titus, D. Emily, M. Gehlhausen, S.C. Witczak, M.C. Maher, D. Van Nort: Identification of degradation mechanisms in bipolar linear voltage comparator through correlation of transistor and circuit response, IEEE transactions on Nuclear Science, vol. 46, №6, pp.1666-1673, (1999).
DOI: 10.1109/23.819136
Google Scholar
[8]
J. Boch, Y.G. Velo, F. Sainge, N. Roche, R.D. Schrimpf, J. Vaille, L. Dusseau, C. Chatry, E. Lorfevre, R. Ecoffet, A.D. Touboul: The use of dose rate switching technique to characterize bipolar devices, IEEE transactions on Nuclear Science, vol. 53, №6, pp.3347-3353, (2009).
DOI: 10.1109/tns.2009.2033686
Google Scholar
[9]
S.K. Lai: Interface trap generation in silicon dioxide when electrons are captured by trapped holes, J. Appl. Phys., vol. 54, pp.2540-2546, May (1983).
DOI: 10.1063/1.332323
Google Scholar
[10]
T. R. Oldham, F.B. McLean, H.E. Boesch, J.M. McGarrity: An overview of radiation-induced interface traps in MOS structures, Semiconductor Sci. Technology, vol. 4, p.986, (1989).
DOI: 10.1088/0268-1242/4/12/004
Google Scholar
[11]
J. M. Benedetto, H.E. Boesch, Jr., F.B. Mclean: Dose and energy dependence of interface trap formation in Cobalt-60 and X-ray environments, IEEE transactions on Nuclear Science, vol. 35, №6, pp.1260-1264, (1988).
DOI: 10.1109/23.25449
Google Scholar