On the Physical Mechanism of the Interaction of the Microwave Radiation with the Semiconductor Diodes

V.V. Shurenkov

doi:10.4028/www.scientific.net/AMR.1016.521

Paper Titles

Numerical Simulation of Powered High-Lift Flow
p.501

Analysis of an Airdrop Motion Coupling N-S Equations with 6 DOF Motion Equations
p.506

Best Attack Position Model for BVR Multi-Target Air Combat
p.511

Analysis of an Aero-Engine Gas Path Fault Monitoring Sensor Model
p.516

On the Physical Mechanism of the Interaction of the Microwave Radiation with the Semiconductor Diodes
p.521

Aeroacoustics Investigation of an Automotive Exhaust Muffler
p.529

Assessment of Real Gas Effects on Approximate and Boundary Layer Equations for Hypersonic Laminar Flow over Axisymmetric Bodies
p.534

Computational Studies of Turbulent Flows in Rotating Radial and 20⁰ Backward Swept Diverging Channels
p.540

On the Unsteady Flow of Two Incompressible Immiscible Second Grade Fluids between Two Parallel Plates
p.546

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1016On the Physical Mechanism of the Interaction of...

On the Physical Mechanism of the Interaction of the Microwave Radiation with the Semiconductor Diodes

Abstract:

The electronic systems of aerospace techniques include power microwave devices and analog and digital semiconductor devices. The radiation of power microwave devices may effect on the semiconductor devices. So it’s necessary to know the electromagnetic effects of this radiation on the semiconductor devices. The electromagetic effects of the microwave radiation exposure on the semiconductor diodes, the main part of any semiconductor devices, are considered. The changes of current – voltage characteristics of the diodes are explained, outgoing from the model of the recombination of carriers through deep energy level recombination center in forbidden gap induced by microwave radiation field.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 1016)

Pages:

521-525

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1016.521

Citation:

Cite this paper

Online since:

August 2014

Authors:

V.V. Shurenkov*

Keywords:

Bipolar Transistors, ELDRS, Input Bias Current, Input Offset Voltage, Operational Amplifiers, Space Environment, Total Dose

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Ablesimova N.A., Weinger A.I., PitanovV.S. Electrical properties of silicon junctions in a strong microwave fields. – FTS, 1988, v. 22, n. 11, p.2001-(2007).

Google Scholar

[2] Akopyan E.A., Weinger A.I., Parickii L.G. The photo-EMF of hot carriers in p-n junction. - FTS, 1974, v. 8, n. 4, pp.754-759.

Google Scholar

[3] Weinger A.I., Parickii L.G. et. /al. Thermo EMF of hot carriers in p-n junction. – FTS, 1975, v. 9, n. 2, pp.216-224.

Google Scholar

[4] A. N Didenko., V. V Shurenkov., Simulation of the interaction of microwave radiation of a diode structures, Engineering physics №4 2001. pp.16-19.

Google Scholar

[5] D.W. Greve, P.P. Potyraj, A.M. Guzman. Field-enhanced emission and capture in polisilicon p-n junctions. Solid-State Electronic. Vol. 28, No 12 (1985), pp.1255-1261.

DOI: 10.1016/0038-1101(85)90051-6

Google Scholar

[6] J. Furlan, Z. Gorup, F. Smole, M. Topic. Modelling Tunneling-Assisted Generation-Recombination Rate in Space-Charge Region of PN A-Si: H Junction, J. Of Modeling and Simulation of Microsystems. Vol. 1, No. 2, Pages 109-114, (1999).

Google Scholar

[7] A.N. Didenko, V.V. Shurenkov. About the physical effects VHF radiation on semiconductor diodes. EUROEM 2004 Book of Abstracts HPEM16-5 p.92 Euro Electromagnetic, 12-16 July2004, Magdeburg, Germany.

Google Scholar