Effect of Oxygen Flow Rate on the Memristive Behavior of Reactively Sputtered TiO2 Thin Films

Nur Syahirah Kamarozaman; Muhamad Uzair Shamsul; Sukreen Hana Herman; Wan Fazlida Hanim Abdullah

doi:10.4028/www.scientific.net/AMR.1024.64

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1024Effect of Oxygen Flow Rate on the Memristive...

Effect of Oxygen Flow Rate on the Memristive Behavior of Reactively Sputtered TiO₂ Thin Films

Abstract:

The paper presents the memristive behavior of sputtered titania thin films on ITO substrate. Titania thin films were deposited by RF magnetron sputtering method while varying the oxygen flow rate of (O₂/ (O₂ + Ar) x100 = 10, 20 and 30 %) during deposition process. The effect of oxygen flow rate to the structural properties was studied including the physical thickness, and also the effect towards switching behavior. It was found that sample deposited at 20 % oxygen flow rate gave better memristive behavior compared to other samples, with larger R_OFF/R_ON ratio of 9. The characterization of memristive behavior includes the effect of electroforming process and successive of I-V measurements are discussed.

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Advanced Materials Research (Volume 1024)

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64-67

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1024.64

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Online since:

August 2014

Authors:

Nur Syahirah Kamarozaman*, Muhamad Uzair Shamsul, Sukreen Hana Herman, Wan Fazlida Hanim Abdullah

Keywords:

Memristive Behaviour, Memristor, Oxygen Flow Rate, RF Magnetron Sputtering Method, TiO₂ Thin Film

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References

[1] R. Williams, How We Found The Missing Memristor, IEEE Spectrum, vol. 45, pp.28-35, (2008).

DOI: 10.1109/mspec.2008.4687366

Google Scholar

[2] B. Hayes, The Memristor, American Scientist, vol. 99, pp.106-110, (2011).

Google Scholar

[3] K. Miller, K.S. Nalwa, A. Bergerud, N.M. Neihart, and S. Chaudhary, Memristive Behavior in Thin Anodic Titania, IEEE Electron Device Lett., pp.737-739, (2010).

DOI: 10.1109/led.2010.2049092

Google Scholar

[4] N. S. Kamarozaman, Z. Aznilinda, S. H. Herman, R. A. Bakar, and M. Rusop, Effect of Annealing Duration on the Memristive Behavior of Pt/TiO2/ITO Memristive Device, in 10th IEEE International Conference on Semiconductor Electronics (ICSE) 2012, pp.703-706.

DOI: 10.1109/smelec.2012.6417240

Google Scholar

[5] L. L. Wei, D. S. Shang, J. R. Sun, S. B. Lee, Z. G. Sun, and B. G. Shen, Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems, Nanotechnology, vol. 24, p.325202 (7pp), (2013).

DOI: 10.1088/0957-4484/24/32/325202

Google Scholar

[6] J. Joshua Yang, Feng Miao, Matthew D Pickett, Douglas A A Ohlberg, Duncan R Stewart, Chun Ning Lau, and R. S. Williams, The Mechanism of Electroforming of Metal Oxide Memristive Switches, Nanotechnology, vol. 20, (2009).

DOI: 10.1088/0957-4484/20/21/215201

Google Scholar

[7] Nauman Malik Muhammad, Navaneethan Duraisamy, Khalid Rahman, Hyun Woo Dang, Jeongdae Jo, and K. H. Choi, Fabrication of Printed Memory Device Having Zinc-Oxide Active Nano-Layer and Investigation of Resistive Switching, Current Applied Physics, vol. 13, pp.90-96, (2013).

DOI: 10.1016/j.cap.2012.06.017

Google Scholar

[8] V. Senthilkumar, A. Kathalingam, V. Kannan, Karuppanan Senthil, and J. -K. Rhee, Reproducible Resistive Switching in Hydrothermal Processed TiO2 Nanorod Film for Non-Volatile Memory Applications, Sensors and Actuators A, vol. 194, pp.135-139, (2013).

DOI: 10.1016/j.sna.2013.02.009

Google Scholar

[9] Z. Aznilinda, S. H. Herman, R. A. Bakar, and M. Rusop, Effect of electrode types on the resistive switching behavior of titania thin films, Applied Mechanics and Materials, vol. 393, pp.74-78, (2013).

DOI: 10.4028/www.scientific.net/amm.393.74

Google Scholar

[10] Cheol Ho Heo, Soon-Bo Lee, and J. -H. Boo, Deposition of TiO2 Thin Films using RF Magnetron Sputtering Method and Study of Their Surface Characteristics, Thin Solid Films, vol. 475, p.183– 188, (2005).

DOI: 10.1016/j.tsf.2004.08.033

Google Scholar

[11] Zhao Bao-Xing, Zhou Ji-Cheng, and R. Lin-Yan, Microstructure and Optical Properties of TiO2 Thin Films Deposited at Different Oxygen Flow Rates, Trans. Nonferrous Met. Soc. China, vol. 20, p.1429−1433, (2010).

DOI: 10.1016/s1003-6326(09)60316-2

Google Scholar

[12] S. B. Lee, H. K. Yoo, K. Kim, J. S. Lee, Y. S. Kim, S. Sinn, D. Lee, B. S. Kang, B. Kahng, and T. W. Noh, Forming mechanism of the bipolar resistance switching in double-layer memristive nanodevices, Nanotechnology, vol. 23, p.315202(9pp), (2012).

DOI: 10.1088/0957-4484/23/31/315202

Google Scholar

[13] J. P. Strachan, J. J. Yang, L. A. Montoro, C. A. Ospina, A. J. Ramirez, A. L. D. Kilcoyne, G. Medeiros-Ribeiro, and R. S. Williams, Characterization of electroforming-free titanium dioxide memristors, Beilstein J. Nanotechnol., vol. 4, p.467–473, (2013).

DOI: 10.3762/bjnano.4.55

Google Scholar