A Chemism Analysis of Alkali in the Chemical Mechnical Polishing Process of SiC Substrate

Abstract:

In this study, according to physic-chemical characteristic of the SiC crystals, we analyzed and researched the role of pH modifier in SiC crystal substrate chemical mechanical polishing and the surface after polishing. We used different polish agents which was made up with inorganic and organic bases to experiment, and then analyzed the results. The parameters of the polishing specimen, such as the removal rate of material, surface scanning and the roughness, were analyzed and used to determine the different pH modifiers played different roles in the stability of polish agents and surface quality of the specimen.

• Periodical: Advanced Materials Research (Volume 1027)
• Pages: 208-212
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1027.208
• Online since: October 2014
• Authors: Jian Guo Yao*, Li Jie Ma, Su Fang Fu, Zhan Kui Wang, Jian Xiu Su
• Keywords: Chemico-Mechanical Polishing, Material Removal Rate (MRR), pH Modifier, SiC Crystas, Surface Roughness (SR)

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