Detection and Analysis of Subsurface Cracks of Single Crystal SiC Wafers Based on Cross-Sectional Microscopy Method

Abstract:

For subsurface crack detection of single crystal SiC wafer, this paper proposed a cross-sectional cleavage detection method and compared with traditional cross-sectional sample preparation method. The characteristics and detection results of two cross-sectional sample preparation methods were compared and the subsurface crack characteristics in SiC wafer grinding were researched. The results show that the configurations and depth of subsurface cracks measured by two cross-sectional sample preparation methods were similar. The cross-sectional cleavage sample preparation method is simpler and more rapid in subsurface crack detection. The subsurface crack system of single crystal SiC wafer grinding mainly includes lateral crack and median crack.

• Periodical: Advanced Materials Research (Volume 1027)
• Pages: 240-245
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1027.240
• Online since: October 2014
• Authors: Qiu Sheng Yan*, Sen Kai Chen, Ji Sheng Pan
• Keywords: Cross-Sectional Microscopy Method, Grinding, Single Crystal, Surface Analysis

References

[1] J. Zolper, M. Skowronski, Advances in silicon carbide electronics, MRS Bulletin-Materials Research Society, 2005, 30(4): 273-279.

DOI: 10.1557/mrs2005.73

[2] P. G. Neudeck, SiC technology, in: B. Raton (Eds. ), The VLSI Handbook, CRC Press and IEEE Press, Florida, 2000: 6. 1–6. 24.

[3] P. P. Hed, D. F. Edwards, J. B. Davis, Subsurface damage in optical materials: origin, measurement and removal, Lawrence Livermore National Laboratory(LLNL) Report, 1989, March 1: 1-17.

[4] J. Shen, S. Liu, K. Yi, et al, Subsurface damage in optical substrates, Optik, 2005, 116(6): 288-294.

DOI: 10.1016/j.ijleo.2005.02.002

[5] D. Lucca, E. Brinksmeier, E. Goch, Progress in assessing surface and subsurface integrity, CIRP Annals-Manufacturing Technology, 1998, 47(2): 669-693.

DOI: 10.1016/s0007-8506(07)63248-x

[6] H. H. K. Xu, S. Jahanmir, Simple technique for observing subsurface damage in machining of ceramics, Journal of American Ceramic Society, 1994, 77 (5) : 1388–1390.

DOI: 10.1111/j.1151-2916.1994.tb05424.x

[7] T. M. A. Maksoud, A. A. Mokbel, J. E. Morgan, Evaluation of surface and sub-surface cracks of ground ceramic, Journal of Materials Processing Technology, 1999, 88: 222–243.

DOI: 10.1016/s0924-0136(98)00403-8

[8] R. W. Keyes. Silicon Carbide, London: Pergamon Press, 1960: 217.

[9] M. Syväjärvi, R. Yakimova, E. Janzén, Cross-sectional cleavages of SiC for evaluation of epitaxial layers, Journal of Crystal Growth, 2000, 208(1): 409-415.

DOI: 10.1016/s0022-0248(99)00484-4