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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 1033-1034Low-Voltage InGaZnO Thin-Film Transistors Gated by...

Low-Voltage InGaZnO Thin-Film Transistors Gated by SiO₂ Proton Conducting Films

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Abstract:

Low-voltage (1.5 V) InGaZnO (IGZO) thin-film transistors (TFTs) gated by the SiO₂ proton conducting films were self-assembled by a gradient shadow mask in sputtered self-assembled IGZO channel process. The IGZO TFTs have a high-performance with a large current on/off ratio of ≥1.2×10⁶, a low subthreshold swing of ≤120 mV/decade and a high field-effect mobility of 2.2 ~ 6.9 cm²/V·s. Threshold voltage is tuned by various thicknesses of IGZO channel. Both depletion mode and enhancement mode on the same chip is obtained, which will implement a direct-coupled field-effect transistor logic circuit. Our results demonstrate that the IGZO TFTs are promising logic circuit candidates for portable low-voltage oxide-based devices.

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Advances in Chemical Engineering and Advanced Materials IV

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Periodical:

Advanced Materials Research (Volumes 1033-1034)

Pages:

1176-1181

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1033-1034.1176

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Online since:

October 2014

Authors:

Rui Chao Liu, Hong Liang Zhang*, Run Yuan Li

Keywords:

InGaZnO, Low-Voltage Operation, SiO₂ Proton Conducting Films, Thin-Film Transistors, Threshold Voltage Tuning

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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