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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1040The Reactive Deposition of TiOx Thin Films

The Reactive Deposition of TiO_x Thin Films

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Abstract:

The article reports on the aspects of reactive deposition ultra-thin TiO_x films (50 nm) by means of dual magnetron system with mirror and closed magnetic field (B field) configurations. The hysteresis effect of electrical discharge characteristics and oxygen partial pressure P(O₂) are presented. The dual magnetron with closed B field configuration has less hysteresis peculiarities and transits back to metallic deposition mode at higher O₂ flow rate (Q). The deposition rates don’t depend on B field configuration and correlate with changing of P(O₂) and discharge voltage. The refractive spectra and energy of band gap, which are measured by UV-visible spectrophotometry and ellipsometry (λ=632.8 nm) methods, have strong dependence on Q(O₂).

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High Technology: Research and Applications

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Periodical:

Advanced Materials Research (Volume 1040)

Pages:

748-752

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1040.748

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Online since:

September 2014

Authors:

Dmitrii V Sidelev*, Yuriy N. Yurjev

Keywords:

Dual Magnetron, Reactive Sputtering, TiO_x Thin Films

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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