Study on the Influence of the Waveguide Layer to the Far Field of GaN Based Laser Diode

Hui Liao; Mao Zhu Sun; Jian Jun Zhang; Yan Wen Zhang; Ting Fan; Chun Yan Song; Kun Yang

doi:10.4028/www.scientific.net/AMR.1061-1062.991

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 1061-1062Study on the Influence of the Waveguide Layer to...

Study on the Influence of the Waveguide Layer to the Far Field of GaN Based Laser Diode

Abstract:

In this paper, the far field of GaN based laser diode is discussed by using numerical simulation method. Results show that, the divergence angle θ_⊥ of far field increased with the thickness of the waveguide layer as exponential decay and the divergence angle θ_// of far field increased with the thickness of the waveguide layer. The aspect ratio of far field distribution increased with increasing the thickness of the waveguide layer as exponential decay.