Enhance the Power Capability of TaN Thin Film Resistor by Improving Processes

Bin Wang; Qian Tao Cao; Zhen Guo Song

doi:10.4028/www.scientific.net/AMR.1082.30

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Enhance the Power Capability of TaN Thin Film Resistor by Improving Processes
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Study on Low TCR TaN Thin Film Resistors by D.C. Magnetron Sputtering
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1082Enhance the Power Capability of TaN Thin Film...

Enhance the Power Capability of TaN Thin Film Resistor by Improving Processes

Abstract:

Technologies of TaN thin-film resistors were studied, the thin films were prepared by the D.C. sputtering system, and the trimming methods of the resistor were anodic oxidation and autoxidation. We laid emphasis on the study of power capability of TaN thin film resistor in this paper. We acquired the resistors with the average power capability of 13W/mm².

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Periodical:

Advanced Materials Research (Volume 1082)

Pages:

30-33

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1082.30

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Online since:

December 2014

Authors:

Bin Wang*, Qian Tao Cao, Zhen Guo Song

Keywords:

Magnetic Sputtering, Power Capability, Sapphire Substrate, TaN, TaN Thin Film Resistor

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