Study on Low TCR TaN Thin Film Resistors by D.C. Magnetron Sputtering

Bin Wang; Zhen Guo Song; Qian Tao Cao

doi:10.4028/www.scientific.net/AMR.1082.34

Paper Titles

Deflagration of Emulsion Explosive
p.18

Emulsion Explosives Containing Catalytic Metal Ion
p.22

Stability Test of Emulsion Matrix in the Emulsifier
p.26

Enhance the Power Capability of TaN Thin Film Resistor by Improving Processes
p.30

Study on Low TCR TaN Thin Film Resistors by D.C. Magnetron Sputtering
p.34

Application of Dark Field Model of OM in Quantitative Detection of Strengthen Phase in Beryllium Bronze
p.38

Study of UV Irradiation on Behavior of NBR Rubber from Oil Seal
p.42

Unusual Properties of Anisotropic Magnetodielectric Metamaterials
p.46

Application of Nanocomposite Track Membranes for Electron Microscopy Samples Preparation
p.51

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1082Study on Low TCR TaN Thin Film Resistors by D.C....

Study on Low TCR TaN Thin Film Resistors by D.C. Magnetron Sputtering

Abstract:

In this paper, TaN thin film were deposited on ceramic substrates by D.C. magnetron sputtering. The surface morphology of two types of TaN thin film resistors were investigated by SEM. The characteristics of the TaN thin film resistor was also studied. The key point was put on the TCR of the TaN thin film resistors. The resistors were trimmed by the autoxidation process and the anodic oxidation process, and the TCR values of about +21ppm/°C and-137.3ppm/°C in average have been achieved respectively.

You might also be interested in these eBooks

Advanced Materials and Engineering Materials IV

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 1082)

Pages:

34-37

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1082.34

Citation:

Cite this paper

Online since:

December 2014

Authors:

Bin Wang*, Zhen Guo Song, Qian Tao Cao

Keywords:

Ceramic, Magnetron Sputtering, TaN Thin Film Resistor, TCR

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] GAO Liang, Research Status and Application of Tantalum Nitride Thin Film by Deposition, Materials Review. 24(2010) 20-25.

Google Scholar

[2] Y.M. Lu, Electrical properties of TaxNy films by implementing OES in the sputtering system, Materials Chemistry and Physics. 72 (2001) 278-280.

DOI: 10.1016/s0254-0584(01)00452-7

Google Scholar

[3] BAI Ya-xu YUAN Zheng-xi HE Wei HE Bo MO Yun-qi, Control of electrical resistivity of TaN thin films by reactive sputtering for embedded passive resistors, Integrated PCB. 12 (2010)55-58.

Google Scholar

[4] LIU Feifei, TANG Yun, ZHANG Wanli, JIANG Hongchuan, SI Xu, Effect of heat treatment on the electric properties of TaN thin films, ELECTRONIC COMPONENTS AND MATERIALS. 30 (2011) 47-49.

Google Scholar

[5] Y.M. Zhou, Z. Xie H.N. Xiao, P.F. Hu,J. He. Structure and properties of Ta/TaO× barrier films deposited by direct current magnetron sputtering, Vacuum. 84(2009)330-334.

DOI: 10.1016/j.vacuum.2009.07.004

Google Scholar

[6] DAI Bo, NI Jing, Study on Face Centered Cubic TaN Film Power Resistor, J Magn Mater Devices. 41 (2010) 37-40.

Google Scholar

[7] LIU Feifei, TANG Yun, ZHANG Wanli, JIANG Hongchuan, SI Xu, Effect of heat treatment on the electric properties of TaN thin films, ELECTRONIC COMPONENTS AND MATERIALS. 30 (2011) 47-49.

Google Scholar