Synthesis of Al-Doped ZnO Nanorod Arrays on Al-Doped ZnO Seed Layer and their Properties

Abstract:

Aluminium (Al)-doped zinc oxide (ZnO) nanorod arrays have been synthesized on a glass substrate, where the seed layer is Al-doped ZnO thin film as well, using the sonicated sol–gel immersion method. The nanorods structure was synthesized by preparing a solution 0.0026 M of zinc nitrate hexahydrate (Zn (NO₃)₂·6H₂O, 98%, Systerm) as a precursor, 0.1 M hexamethylenetetramine (HMT, C₆H₁₂N₄, 99%, Aldrich) as a stabilizer and 0.001M aluminum nitrate nonahydrate (Al (NO₃)₃∙9H₂O, 98%, Analar) as a dopant, dissolved in deionized (DI) water. The resistivity is 7626.72 Ωcm and the conductivity is 1.31 x 10^-4 Scm^-1. The peak of UV emission of the sample is at 380 nm.

• Periodical: Advanced Materials Research (Volume 1109)
• Pages: 266-270
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1109.266
• Online since: June 2015
• Authors: M.N. Wahida*, M.H. Mamat, Mohamad Rusop
• Keywords: Electrical Properties, Optical Property, Sol–Gel Preparation, Thin Film, ZnO Nanorod

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