Pressure Dependence of AZO Film Deposited by RF Powered Magnetron Sputtering System

Abstract:

This paper investigates the dependence of pressure onto characteristic of Aluminium Zinc Oxide (AZO) thin films. Films were deposited on a glass substrate by RF Magnetron Sputtering using AZO ceramic target with 99.99% purity. Sputtering was performed with RF power of 100 Watt and the deposition times were fixed at 40 minutes. The argon pressures were varied from 10 sccm to 30 sccm in order to achieve different working pressure during deposition in order to study the effect of pressure towards characteristic of films. AZO thin films on different argon pressure were successfully deposited onto glass substrate. All films are polycrystalline with (0 0 2) preferential orientation and fully transparent films with high transparency above 80 percent were achieved. The film deposited at 10 sccm argon flow exhibit the highest growth rate at 7.9 nm/m, highest intensity XRD peak with higher crystalline quality and lowest resistivity that is 2.7 x 10^ˉ2 Ω cm .

• Periodical: Advanced Materials Research (Volume 1119)
• Pages: 29-33
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1119.29
• Online since: July 2015
• Authors: Farah Lyana Shain*, Azmizam Manie Mani, Lam Mui Li, Umar Faruk Shuib, Saafie Salleh, Afishah Alias, Khairul Anuar Mohamad
• Keywords: Argon Pressure, AZO, RF Magnetron Sputter

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