Advancements in MOSFET Channel Materials a Comparative Review

Abstract:

MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) technology has evolved rapidly in response to the demand for increased performance, lower power consumption, and ongoing device downsizing. This study provides a comparative review of various materials used in MOSFETs from 2021 to 2025, focusing on developments in channel ^materials as well as their features, advantages, and problems. While silicon (Si) and silicon-germanium (SiGe) continue to dominate mainstream technology, new materials such as indium gallium arsenide (InGaAs) and gallium nitride (GaN) have gained popularity. They are used for high-speed, low-power, and power electronics applications due to their superior electron mobility and high breakdown voltages. Two-dimensional (2D) materials like molybdenum disulfide (MoS₂) and black phosphorus (BP) show promise for ultra-thin, flexible, and energy-efficient devices. However, integrating them into large-scale manufacturing remains a challenge. Silicon is included into transistors, integrated circuits, and solar cells. SiGe excels in high-speed wireless transmission. GaN powers devices with high frequency and voltage, such as LEDs. SiC improves EV and renewable energy systems. InGaAs is essential for near-infrared photodetectors. Diamonds improve electronic cooling. MoS₂ supports field-effect transistors and photodetectors. This article also looks at continuing research into germanium (Ge) and other new materials, which have great mobility but suffer from leakage currents and fabrication complexity. The comparison of these materials provides insight into the future of MOSFET technology, helping researchers and industry professionals to next-generation semiconductor solutions.

• Periodical: Advanced Materials Research (Volume 1187)
• Pages: 15-27
• DOI: https://doi.org/10.4028/p-Pou2Qy
• Online since: February 2026
• Authors: Sania Sania, Parvesh Gangwani*, Meenu Mohil, Ravneet Kaur
• Keywords: 2D Materials, Channel Materials, Low Power Devices, MOSFET, Sustainability

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