GeCu/Si Bilayer Thin Film for Write-Once Blue Laser Optical Recording Media

Sin Liang Ou; Po Cheng Kuo; Don Yau Chiang; Chin Yen Yeh; Shih Hsien Ma; Wei Tai Tang

doi:10.4028/www.scientific.net/AMR.123-125.687

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 123-125GeCu/Si Bilayer Thin Film for Write-Once Blue...

GeCu/Si Bilayer Thin Film for Write-Once Blue Laser Optical Recording Media

Abstract:

GeCu(6 nm)/Si(6 nm) bilayer recording thin film was deposited on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The ZnS-SiO2 films were used as protective layers. We have studied the thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film. Thermal analysis shows that the GeCu/Si bilayer film has two reflectivity changes with the temperature ranges, 120 °C ~ 165 °C and 310 °C ~ 340 °C. The results of dynamic tests show that the optimum jitter values at recording speeds of 1X and 4X are 5.8% and 5.9%, respectively. The modulations at 1X and 4X recording speeds are all larger than 0.4.

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Advanced Materials Research (Volumes 123-125)

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687-690

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.123-125.687

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Online since:

August 2010

Authors:

Sin Liang Ou, Po Cheng Kuo, Don Yau Chiang, Chin Yen Yeh, Shih Hsien Ma, Wei Tai Tang

Keywords:

GeCu/Si Bilayer Thin Film, Write-Once Blue-Laser Optical Recording

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