The Research of Modulation Period on Photoelectric Properties of Ti/TiN Multilayer Films

Abstract:

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A series of Ti/TiN multilayer films were prepared by reactive DC magnetron sputtering onto Si(111) substrates. The resistivity and optical reflectance of these thin films were measured as a function of the modulated, multilayered thickness and the number of layered structures. The resistivity decreased with increase in the number of layers in the film up to 4 layers. The reflectance in the near infrared region increased with increase in layer thickness but after a certain thickness, the change in reflectance was minimal. An optimum thickness of 25 nm for the modulated film realized a maximum of 0.829 in the near infrared reflectance. With the number of layers greater than 15, an interfacial layer of Ti2N was observed.

Info:

Periodical:

Advanced Materials Research (Volumes 126-128)

Edited by:

Yunn-Shiuan Liao, Chao-Chang A. Chen, Choung-Lii Chao and Pei-Lum Tso

Pages:

935-939

DOI:

10.4028/www.scientific.net/AMR.126-128.935

Citation:

M. Hu and Y. Liu, "The Research of Modulation Period on Photoelectric Properties of Ti/TiN Multilayer Films", Advanced Materials Research, Vols. 126-128, pp. 935-939, 2010

Online since:

August 2010

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$35.00

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