For optimum fabrication and usage of Cu films, an understanding of the relationship between processing and microstructure is required. The existence of twins is another significant factor for texture development in Cu films. Texture character and strength in the Cu film is dependent on the twin boundary development that is a function of processing conditions and film thickness. In this study, determination of grain growth and texture in the sputtered and electroplated Cu films during annealing was performed for films of 100, 480 and 850 nm in thickness deposited on a Ta(25 nm)/Si wafer. The texture was measured by X-ray pole figure. The effect of film thickness on the annealing texture in the sputtered and electroplated Cu films is examined and discussed.