Preparation and Characterisation of an Aligned Carbon Nanotube Array on the Ni-Deposited Silicon Surface

Gang Li; Wen Ming Cheng

doi:10.4028/www.scientific.net/AMR.152-153.722

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 152-153Preparation and Characterisation of an Aligned...

Preparation and Characterisation of an Aligned Carbon Nanotube Array on the Ni-Deposited Silicon Surface

Abstract:

An aligned carbon nanotube（CNT）array has been prepared on large area Ni-deposited silicon substrates via the pyrolysis of C2H2 using thermal chemical vapor deposition technique at 900°C. Ni nanoparticles were formed when Ni catalyst film was etched and conglomerated by NH3 pretreatment. Under the experimental conditions used, scanning electron microscope (SEM) images showed the CNTs films with 3090 nm in diameter and 17 m in length grown perpendicular to the surface of the substrates at an average growth rate of 102 m/h. Energy dispersive X-ray (EDX) spectrum is carried out to identify the composition of the CNTs and EDX analysis demonstrated that the CNTs are formed as tip growth.

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Advanced Materials Research (Volumes 152-153)

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722-725

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https://doi.org/10.4028/www.scientific.net/AMR.152-153.722

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Online since:

October 2010

Authors:

Gang Li, Wen Ming Cheng

Keywords:

Carbon Nanotube (CN), Chemical Vapor Deposition (CVD), Nanoparticle, Tip Growth

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