Preparation and Characterisation of an Aligned Carbon Nanotube Array on the Ni-Deposited Silicon Surface

Abstract:

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An aligned carbon nanotube(CNT)array has been prepared on large area Ni-deposited silicon substrates via the pyrolysis of C2H2 using thermal chemical vapor deposition technique at 900°C. Ni nanoparticles were formed when Ni catalyst film was etched and conglomerated by NH3 pretreatment. Under the experimental conditions used, scanning electron microscope (SEM) images showed the CNTs films with 3090 nm in diameter and 17 m in length grown perpendicular to the surface of the substrates at an average growth rate of 102 m/h. Energy dispersive X-ray (EDX) spectrum is carried out to identify the composition of the CNTs and EDX analysis demonstrated that the CNTs are formed as tip growth.

Info:

Periodical:

Advanced Materials Research (Volumes 152-153)

Edited by:

Zhengyi Jiang, Jingtao Han and Xianghua Liu

Pages:

722-725

DOI:

10.4028/www.scientific.net/AMR.152-153.722

Citation:

G. Li and W. M. Cheng, "Preparation and Characterisation of an Aligned Carbon Nanotube Array on the Ni-Deposited Silicon Surface", Advanced Materials Research, Vols. 152-153, pp. 722-725, 2011

Online since:

October 2010

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Price:

$35.00

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