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Effect of Hydrogenation on Structural, Optical and Electrical Properties of Amorphous InAsSb Thin Films

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Abstract:

Amorphous InAsSb films and hydrogenated InAsSb films are deposited on substrates of quartz glass and silicon by rf magnetron sputtering technique in different gas ambient. The effect of H addition on structure, optical properties and electrical properties of a-InAsSb is studied. It is found that the bonded hydrogen content increases with increasing H2 to Ar flow rate radio(R). When R is 0.1, Hydrogen addition shifts the optical absorption edge to higher energy, decreases the dark conductivity and improves the photo-sensitivity. However, hydrogen addition produces the crystallization of the film at R>0.1. Moreover the optical gap, dark conductivity and photo-sensitivity of the films have a reverse change compared with that in R=0. These results demonstrate that hydrogen has obvious passivation effects on rf sputtered amorphous InAsSb thin films only at R=0.1.

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Periodical:

Advanced Materials Research (Volumes 160-162)

Pages:

1508-1512

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.160-162.1508

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Online since:

November 2010

Authors:

Yan Ping Yao, Chun Ling Liu, Hai Dong Qi, Xi Chang, Chun Wu Wang

Keywords:

Hydrogenation, InAsSb, Thin Film

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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