Effect of Hydrogenation on Structural, Optical and Electrical Properties of Amorphous InAsSb Thin Films

Abstract:

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Amorphous InAsSb films and hydrogenated InAsSb films are deposited on substrates of quartz glass and silicon by rf magnetron sputtering technique in different gas ambient. The effect of H addition on structure, optical properties and electrical properties of a-InAsSb is studied. It is found that the bonded hydrogen content increases with increasing H2 to Ar flow rate radio(R). When R is 0.1, Hydrogen addition shifts the optical absorption edge to higher energy, decreases the dark conductivity and improves the photo-sensitivity. However, hydrogen addition produces the crystallization of the film at R>0.1. Moreover the optical gap, dark conductivity and photo-sensitivity of the films have a reverse change compared with that in R=0. These results demonstrate that hydrogen has obvious passivation effects on rf sputtered amorphous InAsSb thin films only at R=0.1.

Info:

Periodical:

Advanced Materials Research (Volumes 160-162)

Edited by:

Guojun Zhang and Jessica Xu

Pages:

1508-1512

DOI:

10.4028/www.scientific.net/AMR.160-162.1508

Citation:

Y. P. Yao et al., "Effect of Hydrogenation on Structural, Optical and Electrical Properties of Amorphous InAsSb Thin Films", Advanced Materials Research, Vols. 160-162, pp. 1508-1512, 2011

Online since:

November 2010

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$35.00

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