Transparent Conducting ZnO:Ga Epitaxial Films Prepared on Epi-GaN/Al₂O₃ (0001) by MOCVD

Abstract:

High-quality Gallium-doped zinc oxide (ZnO:Ga) films have been prepared on epi-GaN/sapphire (0001) substrates by the metalorganic chemical vapour deposition (MOCVD) method. The relative amount of gallium doping was varied from 0 to 8% (atomic ratio). The structural, electrical and optical properties of the ZnO:Ga films have been investigated in detail, as a function of Ga content. All the prepared samples have the wurtzite structure of pure ZnO with a strong (0002) preferred orientation. The microstructure for the surface of films was markedly influenced by the amount of Ga doping. The resistivity decreases continuously with adding Ga content and reaches to the value of 8.4×10-3 Ω•cm at 8%. The average transmittance for the deposited ZnO:Ga samples in the visible range was over 75%.

• Periodical: Advanced Materials Research (Volumes 160-162)
• Pages: 634-639
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.160-162.634
• Online since: November 2010
• Authors: Qiao Qun Yu, Jin Ma, Cai Na Luan, Ling Yi Kong, Zhen Zhu
• Keywords: Electrical Properties, Microstructure, MOCVD, ZnO:Ga Film

References

[1] H. Kim, J.S. Horwitz, G. Kushto, A. Piqué, Z.H. Kafafi, C.M. Gilmore, D.B. Chrisey, J. Appl. Phys, 88 (2000) 6021.

[2] D.S. Ginley and C. Bright, MRS Bull. 25, 15 (2000).

[3] J. Ma, F. Ji, H.L. Ma, S.Y. Li, Thin Solid Films 279 (1996) 213.

[4] W.S. Lan, S.J. Fonash, J. Electron. Mater. 141 (1987) 16.

[5] W. Copel, U. Lampe, Phys. Rev. B 22 (1980) 6447.

[6] T. Minami, H. Nato, S. Takata, Jpn. J. Appl. Phys. 24 (1985) L781.

[7] A.E. Jimenez Gonzalez, J.A. Soto Urneta, Sol. Energy Mater. Sol. Cells 52 (1998) 345.

[8] X.H. Yu, J. Ma, F. Ji, Y.H. Wang, X.J. Zhang, C.F. Cheng, H.L. Ma. J. Cryst. Growth 274 (2005) 474.

[9] K.Y. Cheong, N. Muti, Ramanan, Thin Solid Films 410 (2002) 142.

[10] V. Bhosle, A. Tiwari, and J. Narayan, J. Appl. Phys. 100, 033713 (2006).

[11] J.D. Ye, S.L. Gu, S.M. Zhu, S.M. Liu, Y.D. Zheng, R. Zhang, Y. Shi, H.Q. Yu, Y.D. Ye, J. Cryst. Growth 283 (2005) 279.

[12] T. Makino and Y. Segawa, Appl. Phys. Lett. 85 (2004) 759.

[13] International Center for Diffraction Data, PDF-2 card 36-1451.

[14] I.A. Buyanova, X.J. Wang, W.M. Wang, C.W. Tu, W.M. Chen, Superlattices Microstruct 45 (2009) 413.

[15] J.F. Moulder, W.F. Stickle, P.E. Sobol and K.D. Bomben, Handbook of X-ray Photoelectron Spectroscopy, ed. J. Chastain, Physical Electronics Division, Perkin-Elmer Corporation (1992).

[16] J.A. Sans, A. Segura, J.F. Sanchez-royo, V. Barber, M.A. Hernandez-Fenollosa, B. Mari, Superlattices Microstruct 39 (2006) 282.

[17] A.E. Rakhshani, A. Bumajdad, J. Kokaj, Appl. Phys. A 89, 923 (2007).

[18] Q.B. Ma, Z.Z. Ye, H.P. He, S.H. Hu, J.R. Wang, L.P. Zhu, Y.Z. Zhang, B.H. Zhao, J. Cryst. Growth, 304 (2007) 64.

[19] S. Ghosh, A. Sarkar, S. Chaudhuri, A.K. Pal. Thin Solid Films 205 (1991) 64.

[20] Y.C. Huang, Z.Y. Li, H.H. Chen, W.Y. Uen, S.M. Lan, S.M. Liao, Y.H. Huang, C.T. Ku, M.C. Chen, T.N. Yang, C.C. Chiang, Thin Solid Films 517 (2009) 5537.

DOI: 10.1016/j.tsf.2009.03.194

[21] E. Burstein, Phys. Rev. 93 (1954) 632.

[22] B.H. Choi, H.B. IM, J.S. Song, and K.H. Yoon, Thin Solid Films 193, 712 (1990).