We present a systematic study of the effect of the sputtering parameters on the structure and composition of InSb film. The effect of the sputtering parameters on the crystallographic structure of InSb films is discussed in terms of the kinetic energy of the particle bombarding the growing film. Measurements of the chemical composition show that In to Sb concentration ratio increases with the increase of working pressure because Sb atoms are more rapidly thermalized by collisions with argon atoms during the transport process of the sputtered atoms. And the composition of the films is governed by the Sb re-evaporation process at the surface of the growing films. In to Sb concentration ratio is enhanced by increasing the substrate temperature (essentially) or RF power.