Structure and Composition Study of InSb Films Prepared by Radio-Frequency Sputtering

Abstract:

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We present a systematic study of the effect of the sputtering parameters on the structure and composition of InSb film. The effect of the sputtering parameters on the crystallographic structure of InSb films is discussed in terms of the kinetic energy of the particle bombarding the growing film. Measurements of the chemical composition show that In to Sb concentration ratio increases with the increase of working pressure because Sb atoms are more rapidly thermalized by collisions with argon atoms during the transport process of the sputtered atoms. And the composition of the films is governed by the Sb re-evaporation process at the surface of the growing films. In to Sb concentration ratio is enhanced by increasing the substrate temperature (essentially) or RF power.

Info:

Periodical:

Advanced Materials Research (Volumes 160-162)

Edited by:

Guojun Zhang and Jessica Xu

Pages:

886-890

DOI:

10.4028/www.scientific.net/AMR.160-162.886

Citation:

Y. P. Yao et al., "Structure and Composition Study of InSb Films Prepared by Radio-Frequency Sputtering", Advanced Materials Research, Vols. 160-162, pp. 886-890, 2011

Online since:

November 2010

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$35.00

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