Structural and Optical Properties of 6H-SiC Helium and Oxygen Implanted at 700 K

Hong Hua Zhang; Wei Min Gao; Y.L. Shen; B.S. Li

doi:10.4028/www.scientific.net/AMR.177.287

Paper Titles

Microstructure and Luminance Properties of Integrated Translucent Alumina Tube Used in Metal Halide Lamps
p.272

Luminescence Properties of Eu²⁺ Doped Ca-α-SiAlON Phosphor
p.277

Preparation and Photocatalysis of Sulfur-Doped Nano-TiO₂/Ti Film
p.281

Photocatalytic Activity of F^-/ SiO₂/TiO₂ Nanowires
p.284

Structural and Optical Properties of 6H-SiC Helium and Oxygen Implanted at 700 K
p.287

Influence of Background Material on 3 Veneered All-Ceramic Core Materials
p.293

Relative Translucency Test of 3 All-Ceramics System Core Material
p.298

Test of Relative Translucency for Three Veneered All-Ceramic Systems Core Material
p.302

Vibration and Temperature Measuring Experiments on Multilayer Piezoelectric Actuator
p.306

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 177Structural and Optical Properties of 6H-SiC Helium...

Structural and Optical Properties of 6H-SiC Helium and Oxygen Implanted at 700 K

Abstract:

Raman scattering spectroscopy, ultraviolet and visible absorption spectroscopy and Rutherford backscattering spectrometry were employed to analyze the annealing behavior of defects and the optimistic effect of cavities to oxygen. It was found that the cavities had strong getting effect to oxygen and captured its neighboring implanted oxygen atom, and enhanced the formation of SixOy compound, thus helped shaping the buried oxide in a well defined region. In addition, it also minished the damage level in lattice. The interface between damage layer and crystalline layer was estimated to be 198 nm below surface of 6H-SiC. The implanted oxygen was pegged in the compressed and serried cavity layer, making the amorphous layer narrower than that of reference samples

You might also be interested in these eBooks

Testing and Evaluation of Inorganic Materials I

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 177)

Pages:

287-292

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.177.287

Citation:

Cite this paper

Online since:

December 2010

Authors:

Hong Hua Zhang, Wei Min Gao, Y.L. Shen, B.S. Li

Keywords:

6H-SiC, RAMAN, RBS-C, UV

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] A. Van Veen, A. Rivera, H. Schut, et al.: Nucl. Instrum. Meth. Phys. Res. B Vol. 216 (2004), p.264.

Google Scholar

[2] C.C. Griffioen, J.H. Evans, P.C. de Jong, et al.: Nucl. Instrum. Meth. Phys. Res. B Vol. 27 (1987), p.417.

Google Scholar

[3] S.M. Myers, D.M. Bishop, D.M. Follstaedt, et al.: Mat. Res. Soc. Symp. Vol. 283 (1993), p.549.

Google Scholar

[4] C.H. Zhang, S.E. Donnelly, V.M. Vishnyakov, et al.: J. Appl. Phys. Vol. 94 (2003), p.6017.

Google Scholar

[5] M. Zhang, X.Z. Duo, Z.X. Liu, et al,: J. Functional Materials and Devices. Vol. 4 (1998), p.13.

Google Scholar

[6] J.F. Ziegler, J.P. Biersack, U. Littmark, et al.: The Stopping and Range of Ions in Solids (Pergamon press, New York, 1984).

Google Scholar

[7] W.L. Jiang, W.J. Weber, C.M. Wang, et al.: Defect and Diffusion Forum Vol. 226-228 (2004), p.91.

Google Scholar

[8] S. Nakashima and K. Tahara: Phys. Rev. B Vol. 40 (1989), p.6339.

Google Scholar

[9] S. Nakashima and H. Harima: Phys. Stat. Sol. A Vol. 162 (1997), p.39.

Google Scholar

[10] R. Menzel, K. Gartner, W. Wesch, et al.: J. Appl. Phys. Vol. 88 (2000), p.5658.

Google Scholar

[11] H.H. Zhang, C.H. Zhang, B.S. Li, et al.: Acta Phys. Sin. Vol. 58 (2009), p.3302.

Google Scholar

[12] H.H. Zhang, C.H. Zhang, B.S. Li, et al.: Nucl. Instrum. Meth. Phys. Res. B (2010), doi: 10. 1016/j. nimb. 2010. 04. 012.

Google Scholar

[13] D.M. Follstaed, S.M. Myers, G.A. Petersen, et al.: J. Electronic Materials Vol. 25 (1996), p.151.

Google Scholar

[14] C.H. Zhang, S.E. Donnelly, V.M. Vishnyakov, et al.: Nucl. Instrum. Meth. Phys. Res. B Vol. 218 (2004), p.53.

Google Scholar