Characterization of Silicon Carbide Films Prepared by Chemical Vapor Deposition

Fan Tao Meng; Shan Yi Du; Yu Min Zhang

doi:10.4028/www.scientific.net/AMR.177.78

Paper Titles

Novel Phase Transformation Phenomenon of Potassium Teteratitanate Nanofibres Synthesized from H₂TiO₃
p.62

Crystal Structure and Chemical Composition of BIMEVOX (ME=Mn)
p.66

Analysis and Evaluation of the Comprehensive Property for Transparent Aluminum Oxynitride (ALON) Ceramics
p.70

Structural Analysis of Multiphase La_1-XSr_xCo_1-XFe_xO_3-δ
p.74

Characterization of Silicon Carbide Films Prepared by Chemical Vapor Deposition
p.78

Preparation and Characterization of Titanate Nanotubes by Hydrothermal Method
p.82

Effect of Nitrogen Pressure on the Morphology of Combustion Synthesized β-Si₃N₄ Crystals
p.86

Effect of Compact Density on the Combustion Synthesizing Silicon Nitride Crystals
p.89

Microstructure of TiC/Nb-Ni Cermets Cladding Layer
p.92

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 177Characterization of Silicon Carbide Films Prepared...

Characterization of Silicon Carbide Films Prepared by Chemical Vapor Deposition

Abstract:

Silicon carbide prepared by chemical vapor deposition (CVD) is one of the important candidate materials for space mirror and high-power mirror such as laser mirror, because of its superior performances such as low density, high melting point and homogeneity. In this paper, the SiC coatings were deposited on the substrates of reaction bonded silicon carbide (RB-SiC) by CVD process. Then, the morphologies of the deposits were examined with scanning electron microscopy. The crystalline phase of the as-deposited films was confirmed with X-ray diffractometry. And the adhesion between the CVD film and the substrate was rated with scraping method. As a result, the morphologies of the deposits, i.e. whiskers at 1050°C or films at 1100°C, are different from that of the substrate. And the mean diameter of the deposits at 1100°C is larger than that at 1050°C. Furthermore, the crystalline phase of the as-deposited film is determined as β-SiC and the adhesion is firm enough not to be peeled off with the scraping test.