Growth of ZnGeP2 Single Crystal by Three-Temperature-Zone Furnace

Xin Zhao; Shi Fu Zhu; Yong Qiang Sun

doi:10.4028/www.scientific.net/AMR.179-180.945

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 179-180Growth of ZnGeP2 Single Crystal by...

Growth of ZnGeP₂ Single Crystal by Three-Temperature-Zone Furnace

Abstract:

In order to meet the requirements of growing high-quality ZnGeP2, a crystal growth furnace with three-temperature-zone was designed and fabricated based on a conventional vertical two-zone tubular resistance furnace. Appropriate temperature gradients of 12~15°C/cm at the growth interface and stable thermal profile were obtained. A crack-free ZnGeP2 single crystal with size of Φ15mm×30mm was grown successfully in the furnace mentioned above. The as-grown crystal was characterized by X-ray diffraction (XRD) and Infrared (IR) spectrophotometers. It is found that there is a cleavage face of (101) and X-ray multiple diffraction peaks of the {101} faces are observed, The infrared transmission of a ZnGeP2 wafer of 3 mm thickness is about 50% in the region of 3~10μm. These results show the designed crystal growth furnace is suitable for growth of ZnGeP2 crystal, and the as-grown ZnGeP2 crystal has good structural integrity and high quality.