Atomistic Model of Amorphous Silicon Nitride by Melt-Quench Method

Abstract:

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Silicon nitride presents good mechanical properties and thermal stability at high temperature. To investigate the mechanism of this unique feature demands a proper atomistic simulation, as the experiments have limitations in nano-scale characterization of chemical structure and the related properties. In this paper, the melt-quench method was used to generate the amorphous structure of silicon nitride, and then the corresponding mechanical properties were studied. The simulation results consist with the experimental results on radial distribution function and Young’s modulus.

Info:

Periodical:

Advanced Materials Research (Volumes 194-196)

Edited by:

Jianmin Zeng, Taosen Li, Shaojian Ma, Zhengyi Jiang and Daoguo Yang

Pages:

80-83

DOI:

10.4028/www.scientific.net/AMR.194-196.80

Citation:

N. B. Liao et al., "Atomistic Model of Amorphous Silicon Nitride by Melt-Quench Method", Advanced Materials Research, Vols. 194-196, pp. 80-83, 2011

Online since:

February 2011

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Price:

$35.00

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