Effect of CuO-Bi2O3 Co-Doping on Microwave Dielectric Properties of Ba4Sm9.33Ti18O54 Ceramics

Zhi Lan Tang; Chun Ying Shen; Zhao Xi Li; Jian Yang; Tai Qiu

doi:10.4028/www.scientific.net/AMR.197-198.548

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 197-198Effect of CuO-Bi2O3 Co-Doping on Microwave...

Effect of CuO-Bi₂O₃ Co-Doping on Microwave Dielectric Properties of Ba₄Sm_9.33Ti₁₈O₅₄ Ceramics

Abstract:

Ba₄Sm_9.33Ti₁₈O₅₄ (BST) ceramics were prepared by conventional solid-state reaction method. The effect of CuO-Bi₂O₃ co-doping on the sintering behavior and microwave dielectric properties of BST ceramics has been investigated. The results indicated that when the total addition of CuO-Bi₂O₃ doping agent was 1.0wt%, the sintering temperature of BST ceramics was reduced to 1240°C as a result of liquid-phase sintering effect derived from CuBi₂O₄. When the total addition of CuO-Bi₂O₃ was fixed at 1.0wt%, the microwave dielelctric properties of BST were improved by adjusting the mass percentage of Bi₂O₃. With the increase of Bi₂O₃ amount from 20wt% to 80wt%, the dielectric constant (ε_r) decreased, the quality factor (Q•f) increased and the temperature coefficient of resonant frequency (τ_f) shifted from negative value to positive value. The excellent microwave dielectric properties of ε_r=82.51, Q•f=7878GHz and τ_f=+6.02ppm/ were obtained for the sample with Bi₂O₃ amount of 80wt% when sintered at 1240°C for 3h.